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SIEMENS BSM101AR

  • BSM101AR

BSM101AR Power Field-Effect Transistor, 200A I(D), 50V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET; BSM101AR

· Categories: IGBT
· Manufacturer: SIEMENS
· Price:
Price Range: US$ 50 - US$ 200 (Estimated)
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· Date Code: Please Verify on Quote
. Available Qty: 1
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Content last revised on July 4, 2023

Manufacturer Part Number: BSM101ARPart Life Cycle Code: ObsoleteIhs Manufacturer: SIEMENS A GPackage Description: FLANGE MOUNT, R-XUFM-X4ECCN Code: EAR99Manufacturer: SiemensRisk Rank: 5.83Case Connection: ISOLATEDConfiguration: SINGLEDS Breakdown Voltage-Min: 50 VDrain Current-Max (ID): 200 ADrain-source On Resistance-Max: 0.003 ΩFET Technology: METAL-OXIDE SEMICONDUCTORFeedback Cap-Max (Crss): 4000 pFJESD-30 Code: R-XUFM-X4Number of Elements: 1Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation Ambient-Max: 700 WPulsed Drain Current-Max (IDM): 600 AQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: SWITCHINGTransistor Element Material: SILICON Power Field-Effect Transistor, 200A I(D), 50V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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