Content last revised on November 11, 2024
Mitsubidhi Powerex NFM IGBT Modules are designed for use in hard, switching (15-30kHz) applications. Each module consists of two IGBT Transistors in a half-bridge, configuration with each transistor, having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified, system assembly and thermal management
Features:
£ Low Drive Power
£ Low ESW(off)
£ Discrete Super-Fast Recovery Free-Wheel Diode
£ Isolated Baseplate for Easy Heat Sinking
Applications:
£ Power Supplies
£ UPS
£ Battery Powered Supplies
£ Induction Heating
Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :100A
Collector current Icp 1ms Tc=25°C :200A
Collector power dissipation Pc:670W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 ~ 4.5 N·m
Weight ytpical value 375g
