Starpower GD100HFL120C2S IGBT Module

GD100HFL120C2S: 1200V 100A Half-Bridge IGBT Module for High-Efficiency Power Conversion

An Engineering-Focused Overview of the GD100HFL120C2S

Content last revised on October 6, 2025.

The GD100HFL120C2S is a 2-pack IGBT module engineered to deliver a superior balance of conduction and switching performance for demanding power conversion applications. Its design prioritizes efficiency and thermal stability, featuring a low collector-emitter saturation voltage and an integrated fast recovery diode (FRD). Key specifications include: 1200V | 100A | VCE(sat) of 2.1V (typ). This translates directly to tangible engineering benefits such as reduced system-level power loss and enhanced operational reliability. For designers of systems like Variable Frequency Drive (VFD), the module's 10µs short-circuit withstand time provides a critical safety margin against fault conditions. Best Fit: For mid-frequency (up to 20kHz) industrial drives and power supplies where minimizing heat dissipation is a primary design driver, this 1200V module offers an optimal performance-to-cost ratio.

Key Parameter Overview

Decoding the Specs for Efficient Power Switching

The technical specifications of the GD100HFL120C2S are foundational to its performance in real-world applications. The following table highlights the critical parameters that directly influence system efficiency, thermal design, and overall robustness.

Download the GD100HFL120C2S datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in Industrial Power Systems

The GD100HFL120C2S is optimized for power conversion systems where efficiency and reliability are paramount. Its characteristics make it a strong candidate for a range of industrial applications.

• Industrial Motor Drives: In a high-fidelity engineering scenario involving a Variable Frequency Drive (VFD), the primary challenge is often managing the heat generated within a sealed, compact enclosure. The GD100HFL120C2S's low VCE(sat) of 2.1V directly attacks this problem by minimizing conduction losses—the primary source of heat at high currents. This reduction in waste heat allows engineers to specify smaller, more cost-effective heatsinks or to increase the power density of the overall drive, a critical competitive advantage.
• Uninterruptible Power Supplies (UPS): The module's robust performance and integrated Fast Recovery Diode ensure efficient and reliable operation in both inverter and rectifier stages of online UPS systems, contributing to a lower Total Cost of Ownership (TCO) through energy savings.
• Welding Power Supplies: The fast switching capability and high current handling make it suitable for inverter-based welding equipment, enabling precise control over the welding arc and improving overall weld quality.

What is the key benefit of the module's low VCE(sat)? It directly reduces conduction power loss, leading to higher efficiency and a lower thermal burden on the system. For systems requiring higher current handling, the related GD200HFL120C2S provides a 200A rating within a similar operational framework.

Frequently Asked Questions (FAQ)

What is the significance of the 10µs short-circuit withstand time for system design?

A 10-microsecond short-circuit withstand time (tsc) is a critical safety parameter. It defines the duration the IGBT can endure a direct short-circuit condition before catastrophic failure. This 10µs window provides the system's protection circuitry—monitored by the Gate Drive—with sufficient time to detect the fault and safely shut down the device. This capability is essential for building robust and reliable systems, particularly in motor drives where stall conditions can occur. For a deeper understanding of fault conditions, see our guide on IGBT Failure Analysis.

How does the typical VCE(sat) of 2.1V on the GD100HFL120C2S impact thermal management choices?

The collector-emitter saturation voltage, VCE(sat), acts like a form of electrical friction; the lower the value, the less energy is wasted as heat when the switch is fully on. A low VCE(sat) of 2.1V at the nominal 100A current directly reduces conduction losses (P_cond = VCE(sat) * Ic). This lower heat generation simplifies Thermal Management, potentially allowing for the use of smaller, lighter, and less expensive heatsinks, or enabling operation at higher ambient temperatures without derating.

What advantage does the integrated Fast Recovery Diode (FRD) offer in switching applications?

The co-packaged Fast Recovery Diode (FRD) is optimized to work in tandem with the IGBT. In half-bridge configurations, this diode provides a path for freewheeling current when the opposite IGBT is on. A "fast recovery" characteristic means it has low reverse recovery charge (Qrr) and time (trr). This minimizes the Switching Loss during the turn-on event of the IGBT, which is especially critical in applications operating at higher frequencies. This leads to improved efficiency and reduced stress on the IGBT itself.

Strategic Advantage in System Design

Building More Competitive and Energy-Efficient Power Systems

Integrating the GD100HFL120C2S into a power system is a strategic decision that extends beyond meeting basic electrical specifications. Its core design focus on minimizing power losses equips engineering teams to develop products that are not only more energy-efficient but also more compact and cost-effective. By reducing the thermal overhead, this module creates design flexibility, enabling innovation in system layout and mechanical construction. In a market increasingly driven by efficiency standards and demands for higher power density, leveraging components like the GD100HFL120C2S provides a foundational advantage for creating next-generation industrial drives, UPS systems, and power supplies.