Mitsubishi PM300DV1A120 IGBT Module

FEATURE

a) Adopting new 5th generation Full-Gate CSTBT™ chip

b) The over-temperature protection which etects the chip surface temperature of CSTBT™ is adopted.

c) Error output signal is possible from all each protection upper and lower arm of IPM.

d) Compatible V-series package.

• Monolithic gate drive & protection logic

• Detection, protection & status indication

circuits for, short-circuit, over-temperature & under-voltage.

Maximum ratings and characteristics

.Absolute maximum ratings (Tc=25°C unless without specified)

• VCES (Collector-Emitter Voltage):VD = 15V, VCIN = 15V: 1200V
• IC (Collector Current): 300A at TC = 25°C
• ICRM (Collector Current Pulse): 600A
• Ptot (Total Power Dissipation at TC = 25°C): 1785W
• IE (Emitter Current): 300A at TC = 25°C
• IERM (Free-wheeling Diode Forward Current Pulse): 600A
• Tj (Junction Temperature): -20 to +150°C
• TC (Module Case Operating Temperature): -20 to +100°C
• Tstg (Storage Temperature): -40 to +125°C
• Visol (Isolation Voltage):

  • 60Hz, Sinusoidal, Charged part to Base plate, AC 1min, RMS: 2500V