Sell CM1200DB-34N, #MITSUBISHI #CM1200DB-34N Stock, MITSUBISHI HVIGBT MODULES CM1200DB-34N High power 1200A 1700V. 4th-Version HVIGBT(High Voltage Insulated Gate Bipolar Transistor) Modules, #IGBT_Module, #IGBT, #CM1200DB_34N
Email: sales@shunlongwei.com
URL:
https://www.slw-ele.com/cm1200db-34n.html
- IC (Collector Current): 1200A
- VCES (Collector-Emitter Voltage): 1700V
- Insulated Type
- 2-element in a Pack
- Cu Baseplate
- Trench Gate IGBT (CSTBT™)
- Soft Reverse Recovery Diode
- VGES (Gate-Emitter Voltage): ±20V
- ICM (Collector Current - Pulse): 2400A (Note 1)
- IE (Emitter Current): 1200A (Pulse, Note 1)
- IEM (Emitter Current - Pulse): 2400A (Note 1)
- PC (Maximum Power Dissipation): 6900W (TC=29°C, IGBT part)
- Ti (Junction Temperature): -40 to +150°C
- Top (Operating Temperature): -40 to +125°C
- Tstg (Storage Temperature): -40 to +125°C
- Viso (Isolation Voltage): 4000V (RMS, sinusoidal, f=60Hz, t=1min)
- Maximum Short Circuit Pulse Width (tpsc): 10μs (WCC=1200V, VCES=1700V, VGE=15V, Ti=125°C)
