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Mitsubishi CM800DU-12H IGBT Module

Mitsubishi CM800DU-12H: A 600V/800A dual IGBT module. Low VCE(sat) delivers high efficiency, while superior thermal design ensures robust system reliability for demanding power applications.

· Categories: IGBT Module
· Manufacturer: Mitsubishi
· Price: US$ 125
· Date Code: 2024+
. Available Qty: 360
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CM800DU-12H Specification

CM800DU-12H: High-Current IGBT for Robust, High-Frequency Power Systems

Introduction: Core Specifications & Engineering Value

The CM800DU-12H by Mitsubishi is a high-power dual IGBT module engineered for demanding switching applications. It delivers a robust current handling capability of 800A and a voltage rating of 600V, coupled with a low thermal resistance (Rth(j-c) of 0.084°C/W per IGBT). This module excels in providing high operational reliability and simplifying thermal management. Its design directly addresses the challenge of achieving both high power density and long-term performance in systems like industrial motor drives and high-power inverters. For applications demanding higher current capacity in a similar voltage class, the related CM1000HA-24H offers an increased rating.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

The technical specifications of the CM800DU-12H are foundational to its performance in high-stress environments. The following table highlights the key parameters that enable its reliable operation. Note the low collector-emitter saturation voltage (VCE(sat)), which is critical for minimizing conduction losses and, consequently, heat generation. This directly translates to higher system efficiency and potentially smaller heatsink requirements.

Parameter Symbol Conditions Value Unit
Collector-Emitter Voltage VCES VGE = 0V 600 V
Collector Current (DC) IC Tc = 25°C 800 A
Peak Collector Current ICM Pulse 1600 A
Collector-Emitter Saturation Voltage VCE(sat) IC = 800A, VGE = 15V, Tj = 125°C 2.6 (Typ) V
Maximum Collector Dissipation Pc Tc = 25°C, per IGBT 1500 W
Thermal Resistance (Junction to Case) Rth(j-c) Per IGBT 0.084 °C/W
Isolation Voltage Viso AC, 1 minute 2500 Vrms

Download the CM800DU-12H datasheet for detailed specifications and performance curves.

Application Scenarios & Value

Achieving System-Level Benefits in High-Current Power Conversion

The CM800DU-12H is engineered for high-power applications where efficient and reliable switching is paramount. Its primary application domains include AC motor controls, high-power Variable Frequency Drives (VFDs), and servo controls that form the backbone of industrial automation. A key engineering challenge in these systems is managing the thermal load generated by high current flow. The module's low VCE(sat) of 2.6V at 800A and 125°C is critical. This parameter is like the "friction" of the switch; a lower value means less energy is wasted as heat during operation. For a designer of a 300kW industrial drive, this translates directly into a more manageable thermal design, enabling smaller, more cost-effective heatsinks and improving the overall power density of the final product. The integrated fast-recovery freewheeling diodes further support this by minimizing switching losses, particularly in inductive load applications like motor control.

Technical Deep Dive

A Closer Look at Thermal Resistance and its Impact on Reliability

A standout feature of the CM800DU-12H is its low junction-to-case thermal resistance (Rth(j-c)) of 0.084°C/W. This value represents the efficiency of heat transfer from the active silicon chip to the module's baseplate. To put this into perspective, think of it as the width of a pipeline for heat. A wider pipeline (lower Rth) allows more heat to escape quickly, keeping the chip's operating temperature lower. For every watt of power dissipated, the junction temperature will only rise by 0.084°C above the case temperature. This is crucial for long-term reliability. Sustained high junction temperatures accelerate material degradation and are a primary cause of power module failure. By facilitating efficient heat extraction, this low thermal resistance gives engineers a greater thermal margin, enhancing the module's resilience to load cycling and extending the operational lifetime of the entire power converter.

Industry Insights & Strategic Advantage

Meeting the Demands for Energy Efficiency and System Uptime

In the context of increasing global pressure for energy efficiency and reduced operational costs, the CM800DU-12H provides a distinct advantage. Industrial sectors are continuously seeking to minimize energy losses in high-power conversion stages, such as in factory automation and large-scale UPS (Uninterruptible Power Supply) systems. The module's low conduction losses (VCE(sat)) and optimized switching characteristics directly contribute to higher inverter efficiency. This not only reduces electricity consumption but also lowers the total cost of ownership (TCO) over the system's lifespan. Furthermore, the robust thermal performance and the isolated baseplate design simplify assembly and enhance system reliability, which is a critical factor in applications where downtime can lead to significant production losses. The CM800DU-12H is well-aligned with the industry's move towards more compact, efficient, and highly reliable power electronics solutions.

Frequently Asked Questions (FAQ)

What is the primary benefit of the low VCE(sat) in the CM800DU-12H?
The primary benefit is reduced conduction power loss. A lower VCE(sat) means less energy is converted into heat when the IGBT is conducting high current, which leads to higher overall system efficiency and reduced cooling requirements.

How does the 0.084°C/W Rth(j-c) impact thermal design?
This low thermal resistance allows for more efficient heat transfer from the IGBT junction to the heatsink. It enables designers to maintain lower operating junction temperatures for a given power dissipation, which can lead to the use of smaller, less expensive heatsinks and improves the module's long-term reliability under heavy loads.

Is the CM800DU-12H suitable for parallel operation?
While the datasheet provides characteristics for a single module, IGBTs like this are often used in parallel for higher current applications. Successful paralleling requires careful consideration of gate drive design, thermal balancing, and busbar layout to ensure proper current sharing. Detailed application notes from the manufacturer, like Mitsubishi, are recommended for guidance.

What does the "Dual" or half-bridge configuration mean for system design?
The dual, or half-bridge, configuration integrates two IGBTs in a common package, typically connected in series. This is the fundamental building block for a standard two-level, three-phase inverter. Using three CM800DU-12H modules allows for the straightforward construction of a complete three-phase inverter stage for applications like AC motor drives.

Strategic Outlook

For engineering teams developing high-current power conversion systems operating on 200-400V AC lines, the CM800DU-12H presents a compelling solution. Its combination of high current capacity, low conduction losses, and excellent thermal performance provides the necessary foundation for building efficient, compact, and reliable systems. The focus on minimizing VCE(sat) and Rth(j-c) underscores a design philosophy aimed at maximizing both operational efficiency and long-term durability, addressing key performance indicators for industrial power electronics.

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