#Texas Instruments, #CSD17506Q5A, #IGBT_Module, #IGBT, CSD17506Q5A 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150; CSD17506Q5A
Manufacturer Part Number: CSD17506Q5ABrand Name: Texas InstrumentsPbfree Code: YesPart Life Cycle Code: Not RecommendedIhs Manufacturer: Texas INSTRUMENTS INCPackage Description: SMALL OUTLINE, R-PDSO-N5Pin Count: 8ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Texas InstrumentsRisk Rank: 7.9Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 259 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 100 ADrain Current-Max (ID): 23 ADrain-source On Resistance-Max: 0.0053 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-N5JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 3.2 WPulsed Drain Current-Max (IDM): 150 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTime 30V, N-Channel NexFET™ Power MOSFET with 20 Volt Vgs 8-VSONP -55 to 150