#Texas Instruments, #CSD18537NQ5A, #IGBT_Module, #IGBT, CSD18537NQ5A 60-V N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150; CSD18537NQ5A
Manufacturer Part Number: CSD18537NQ5ABrand Name: Texas InstrumentsPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: TEXAS INSTRUMENTS INCPackage Description: SMALL OUTLINE, R-PDSO-N5ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Texas InstrumentsRisk Rank: 1.05Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 55 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 60 VDrain Current-Max (Abs) (ID): 50 ADrain Current-Max (ID): 11 ADrain-source On Resistance-Max: 0.017 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-N5JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 3.2 WPulsed Drain Current-Max (IDM): 151 ASubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTime 60-V N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150