Sell Texas Instruments CSD18537NQ5A New Stock

CSD18537NQ5A 60-V N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150; CSD18537NQ5A
  • Part Number:    

    CSD18537NQ5A

  • Category:    

    Discrete Semiconductor

  • Manufacturer:    

    Texas Instruments

  • Packaging:    

  • Data Code:    

    Lead free by exemption / RoHS compliant by exemption

  • Qty Available:    

    250022590

Email us: sales@shunlongwei.com
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Datasheets:CSD18537NQ5AStandard Package:2,500Category:Discrete Semiconductor ProductsFamily:FETs - SingleSeries:NexFET™Packaging:Tape & Reel (TR)FET Type:MOSFET N-Channel, Metal OxideFET Feature:Logic Level GateDrain to Source Voltage (Vdss):60VCurrent - Continuous Drain (Id) @ 25° C:11A (Ta), 50A (Tc)Rds On (Max) @ Id, Vgs:13 mOhm @ 12A, 10VVgs(th) (Max) @ Id:3.5V @ 250µAGate Charge (Qg) @ Vgs:18nC @ 10VInput Capacitance (Ciss) @ Vds:1480pF @ 30VPower - Max:3.2WMounting Type:Surface MountPackage / Case:8-TDFNSupplier Device Package:8-SON (5x6)Dynamic Catalog:N-Channel Logic Level Gate FETsOther Names:296-36455-2CSD18537NQ5A-ND
Texas Instruments CSD18537NQ5A New 60-V N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150, CSD18537NQ5A pictures, CSD18537NQ5A price, CSD18537NQ5A supplier
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Manufacturer Part Number: CSD18537NQ5A
Brand Name: Texas Instruments
Pbfree Code: Yes
Part Life Cycle Code: Active
Ihs Manufacturer: TEXAS INSTRUMENTS INC
Package Description: SMALL OUTLINE, R-PDSO-N5
ECCN Code: EAR99
HTS Code: 8541.29.00.95
Manufacturer: Texas Instruments
Risk Rank: 1.05
Additional Feature: AVALANCHE RATED
Avalanche Energy Rating (Eas): 55 mJ
Case Connection: DRAIN
Configuration: SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min: 60 V
Drain Current-Max (Abs) (ID): 50 A
Drain Current-Max (ID): 11 A
Drain-source On Resistance-Max: 0.017 Ω
FET Technology: METAL-OXIDE SEMICONDUCTOR
JESD-30 Code: R-PDSO-N5
JESD-609 Code: e3
Moisture Sensitivity Level: 1
Number of Elements: 1
Number of Terminals: 5
Operating Mode: ENHANCEMENT MODE
Operating Temperature-Max: 150 °C
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: SMALL OUTLINE
Peak Reflow Temperature (Cel): 260
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 3.2 W
Pulsed Drain Current-Max (IDM): 151 A
Subcategory: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn)
Terminal Form: NO LEAD
Terminal Position: DUAL
Time
60-V N-Channel NexFET™ Power MOSFET 8-VSONP -55 to 150

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