#Texas Instruments, #CSD25302Q2, #IGBT_Module, #IGBT, CSD25302Q2 P-Channel NexFET™ Power MOSFET 6-WSON -55 to 150; CSD25302Q2
Manufacturer Part Number: CSD25302Q2Brand Name: Texas InstrumentsPbfree Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Texas INSTRUMENTS INCPackage Description: SON-6Pin Count: 6ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Texas InstrumentsRisk Rank: 8.01Additional Feature: AVALANCHE RATEDCase Connection: SOURCEConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 5 ADrain Current-Max (ID): 5 ADrain-source On Resistance-Max: 0.092 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-PDSO-N6JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 2.4 WPulsed Drain Current-Max (IDM): 20 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Matte Tin (Sn)Terminal Form: NO LEADTerminal Position: DUALTime P-Channel NexFET™ Power MOSFET 6-WSON -55 to 150