Content last revised on June 3, 2023
Manufacturer Part Number: CSD85312Q3EBrand Name: Texas InstrumentsPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: TEXAS INSTRUMENTS INCPackage Description: SMALL OUTLINE, S-PDSO-N4ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Texas InstrumentsRisk Rank: 1.72Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 72 mJCase Connection: SOURCEConfiguration: COMPLEXDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 12 ADrain Current-Max (ID): 12 AFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-PDSO-N4JESD-609 Code: e4Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2.5 WPulsed Drain Current-Max (IDM): 76 ASubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)Terminal Form: NO LEADTerminal Position: DUALTime Dual 20-V N-Channel NexFET™ Power MOSFETs, CSD85312Q3E 8-VSON -55 to 150