Content last revised on May 26, 2023
Manufacturer Part Number: CSD86311W1723Brand Name: Texas InstrumentsRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: TEXAS INSTRUMENTS INCPackage Description: GRID ARRAY, R-PBGA-B12Pin Count: 12ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Texas InstrumentsRisk Rank: 1.68Configuration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 25 VDrain Current-Max (Abs) (ID): 4.5 ADrain Current-Max (ID): 4.5 ADrain-source On Resistance-Max: 0.051 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PBGA-B12JESD-609 Code: e1Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 12Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: GRID ARRAYPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1.5 WPulsed Drain Current-Max (IDM): 4.5 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: BALLTerminal Position: BOTTOMTime Dual N-Channel NexFET™ Power MOSFET 12-DSBGA -55 to 150