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Texas Instruments CSD87312Q3E

  • CSD87312Q3E
  • CSD87312Q3E Dual 30-V N-Channel NexFET Power MOSFETs 8-VSON-CLIP -55 to 150; CSD87312Q3E

    · Categories: IGBT
    · Manufacturer: Texas Instruments
    · Price:
    Price Range: US$ 50 - US$ 200 (Estimated)
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    · Date Code: Please Verify on Quote
    . Available Qty: 27
    MOQ: 1 PC
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    Content last revised on December 13, 2023

    Manufacturer Part Number: CSD87312Q3EBrand Name: Texas InstrumentsPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: TEXAS INSTRUMENTS INCPackage Description: SMALL OUTLINE, S-PDSO-N7ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Texas InstrumentsRisk Rank: 1.11Additional Feature: AVALANCHE RATED, ULTRA-LOW RESISTANCEAvalanche Energy Rating (Eas): 29 mJCase Connection: SOURCEConfiguration: COMPLEXDS Breakdown Voltage-Min: 30 VDrain Current-Max (Abs) (ID): 27 ADrain Current-Max (ID): 27 ADrain-source On Resistance-Max: 0.038 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: S-PDSO-N7JESD-609 Code: e4Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 7Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: SQUAREPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 2.5 WPulsed Drain Current-Max (IDM): 45 ASubcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)Terminal Form: NO LEADTerminal Position: DUALTime Dual 30-V N-Channel NexFET Power MOSFETs 8-VSON-CLIP -55 to 150