#DYNEX, #DIM600BSS12_A, #IGBT_Module, #IGBT, DIM600BSS12-A Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, B, 5 PIN; DIM600BSS12-A
Manufacturer Part Number: DIM600BSS12-A000Pbfree Code: YesPart Life Cycle Code: Contact ManufacturerIhs Manufacturer: DYNEX SEMICONDUCTOR LTDPackage Description: FLANGE MOUNT, R-XUFM-X5Pin Count: 5Manufacturer: Dynex SemiconductorRisk Rank: 5.68Case Connection: ISOLATEDCollector Current-Max (IC): 600 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEJESD-30 Code: R-XUFM-X5Number of Elements: 1Number of Terminals: 5Package Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELQualification Status: Not QualifiedSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTime Insulated Gate Bipolar Transistor, 600A I(C), 1200V V(BR)CES, N-Channel, B, 5 PIN