#FUJI, #ETM36_030, #IGBT_Module, #IGBT, ETM36-030 Power Bipolar Transistor, 200A I(C), 320V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin; ETM36-030
Manufacturer Part Number: ETM36-030Part Life Cycle Code: ObsoleteIhs Manufacturer: FUJI ELECTRIC CO LTDPackage Description: FLANGE MOUNT, R-PUFM-D3Manufacturer: Fuji Electric Co LtdRisk Rank: 5.82Case Connection: COLLECTORCollector Current-Max (IC): 200 ACollector-Emitter Voltage-Max: 320 VConfiguration: DARLINGTON WITH BUILT-IN DIODE AND RESISTORDC Current Gain-Min (hFE): 150Fall Time-Max (tf): 1200 nsJESD-30 Code: R-PUFM-D3Number of Elements: 1Number of Terminals: 3Package Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: NPNPower Dissipation Ambient-Max: 1000 WPower Dissipation-Max (Abs): 1000 WQualification Status: Not QualifiedRise Time-Max (tr): 2000 nsSubcategory: BIP General Purpose PowerSurface Mount: NOTerminal Form: SOLDER LUGTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Max (toff): 11200 nsTurn-on Time-Max (ton): 2000 ns Power Bipolar Transistor, 200A I(C), 320V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin