Fairchild Semiconductor FDG6308P IGBT Module

Manufacturer Part Number: FDG6308PBrand Name: ON SemiconductorPbfree Code: ActiveIhs Manufacturer: ON SEMICONDUCTORPackage Description: SMALL OUTLINE, R-PDSO-G6Manufacturer Package Code: 419ADECCN Code: EAR99HTS Code: 8541.21.00.95Manufacturer: ON SemiconductorRisk Rank: 0.76Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 0.6 ADrain Current-Max (ID): 0.6 ADrain-source On Resistance-Max: 0.4 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-G6Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 6Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 0.3 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Form: GULL WINGTerminal Position: DUALTime Dual P-Channel 1.8V Specified PowerTrench® MOSFET -20 V, -0.6 A, 400 mΩ, 3000-REEL