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Infineon FF150R12KS4 IGBT Module

Infineon FF150R12KS4: A 1200V/150A six-pack module. Its IGBT4 tech delivers balanced performance for efficient, reliable motor drives and UPS. Housed in the robust EconoDUAL™ 3 package.

· Categories: IGBT Module
· Manufacturer: Infineon
· Price: US$ 45
· Date Code: 2021+
. Available Qty: 34
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FF150R12KS4 Specification

Infineon FF150R12KS4 IGBT Module | Robust 1200V Six-Pack for High-Power Drives

The **Infineon FF150R12KS4** is a high-performance 1200V, 150A six-pack IGBT module engineered for demanding power conversion applications. Housed in the industry-proven EconoDUAL™ 3 package, this module integrates a full three-phase inverter bridge, making it an ideal cornerstone for compact and reliable systems such as industrial motor drives, servo controllers, and uninterruptible power supplies (UPS). Its design philosophy centers on delivering a balanced performance profile, optimizing the trade-off between conduction and switching losses for maximum efficiency in real-world operating conditions.

Technical Deep Dive: The Core of Performance

The superior performance of the **FF150R12KS4** stems from two key Infineon technologies working in synergy. Understanding these provides a clear picture of its value in your design.

  • IGBT4 Trench Field-Stop Technology

    Principle: This technology represents a significant leap in IGBT design. By creating a trench gate structure and an optimized field-stop layer, it achieves a much lower collector-emitter saturation voltage (Vce(sat)) compared to older Non-Punch-Through (NPT) designs. This means less voltage is dropped across the switch when it's on.

    Application Value: For a system designer, this directly translates to reduced conduction losses—the primary source of heat in many motor drive applications. The result is lower heatsink requirements, reduced cooling costs, and higher overall system efficiency, which is critical for meeting modern energy standards.

  • Emitter Controlled 4 Diode

    Principle: The integrated freewheeling diode is not an afterthought. It features a highly "soft" reverse recovery characteristic. This means that when the diode turns off, it avoids abrupt current changes, which are a major source of high-frequency electromagnetic interference (EMI).

    Application Value: This "soft" behavior significantly reduces voltage overshoots and oscillations during switching. Engineers can therefore simplify or even eliminate complex snubber circuits, saving valuable PCB space and component cost. It also makes achieving EMC compliance easier, shortening the design and testing cycle for the final product.

Multi-Dimensional Application Scenarios

The theoretical advantages of the **Infineon FF150R12KS4** manifest as tangible benefits across various industries.

  • Industrial Motor Drives: In a three-phase IGBT inverter for AC motor control, the module's low Vce(sat) minimizes power dissipation, allowing for smaller, more cost-effective heatsinks and enclosures. The integrated NTC thermistor provides crucial real-time temperature feedback for overload protection, enhancing the drive's long-term reliability.
  • Uninterruptible Power Supplies (UPS): For mission-critical UPS systems, reliability is non-negotiable. The robust EconoDUAL™ 3 package and proven IGBT4 Trench Field-Stop technology ensure stable performance under continuous load. The soft-recovery diode helps maintain clean power output by minimizing EMI that could affect sensitive connected equipment.
  • Solar & Wind Power Inverters: Renewable energy systems require high conversion efficiency to maximize the energy harvested. The balanced loss profile of the FF150R12KS4 ensures high performance across a wide range of load conditions, from partial to full power, improving the overall annual energy yield of the inverter.
  • Welding Equipment: In high-frequency welding applications, the module's controlled switching characteristics and thermal stability are essential for delivering precise and consistent power to the welding arc, ensuring high-quality welds.

Key Technical Parameters Overview

Parameter Value
Collector-Emitter Voltage (VCES) 1200 V
Nominal Collector Current (IC nom) 150 A
Collector-Emitter Saturation Voltage (VCEsat, typ) at IC=150A, Tvj=25°C 1.70 V
Maximum Junction Temperature (Tvjmax) 150°C (175°C for overload)
Package EconoDUAL™ 3

For a comprehensive list of specifications, please refer to the official FF150R12KS4 Datasheet.

Selection Advice: IGBT4 vs. Newer Generations

When selecting a module, it's crucial to match the technology to your application's frequency. The **FF150R12KS4** with its IGBT4 technology is an exceptionally well-balanced choice, making it a workhorse for applications switching in the 4 kHz to 15 kHz range. It offers a proven track record of reliability and a cost-effective performance point. In contrast, newer IGBT7 modules may offer even lower Vce(sat) but are optimized for lower switching frequencies (typically below 8 kHz) where conduction losses are the absolute priority. For general-purpose drives and UPS systems, the FF150R12KS4 often represents the more versatile and robust engineering choice.

To explore a wider range of solutions and find the perfect fit for your power stage, you can Explore More IGBT Modules or Contact Us for a Quote to discuss your specific design challenges with our technical specialists.

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