Introducing the Fuji 7MBR15SA120F-01 IGBT Module

The Fuji 7MBR15SA120F-01 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module, specifically designed for applications requiring efficient and reliable power control. Below are its key specifications and features:

Key Specifications

• Collector-Emitter Voltage (Vces): 1200V
• Collector Current (Ic): 15A
• Configuration: Half-Bridge
• Isolation Voltage: 2500V AC for 1 minute
• Operating Junction Temperature (Tj): -40°C to +150°C
• Storage Temperature (Tstg): -40°C to +125°C
• Power Dissipation (Pc): 110W
• Package Type: Module
• Mounting Torque: 3.5 N·m

Features and Benefits

High Voltage and Current Capacity

The 7MBR15SA120F-01 supports a maximum collector-emitter voltage of 1200V and a collector current of 15A, ensuring robust performance for a variety of power electronics applications. This makes it ideal for systems requiring high power handling capabilities.

Efficient Design

Featuring a half-bridge configuration, this module is designed for efficient power conversion and management. Its compact package allows for easy integration into existing systems, and the low VCE(sat) ensures reduced conduction losses, enhancing overall efficiency.

Robust and Reliable

The module operates reliably across a wide temperature range, from -40°C to +150°C. It is equipped with a high isolation voltage of 2500V AC, ensuring protection against electrical breakdowns and enhancing system safety and longevity.

Versatile Applications

The Fuji 7MBR15SA120F-01 IGBT module is suitable for various applications, including:

• Inverters for Motor Drives: Providing precise control and efficient power management.
• AC and DC Servo Drive Amplifiers: Enhancing performance in servo systems.
• Uninterruptible Power Supplies (UPS): Ensuring a continuous and reliable power supply.