#International Rectifier, #IRFZ24NSTRLPBF, #IGBT_Module, #IGBT, IRFZ24NSTRLPBF Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semicon
Manufacturer Part Number: IRFZ24NSTRLPBFRohs Code: YesPart Life Cycle Code: ObsoleteIhs Manufacturer: Infineon TECHNOLOGIES AGPackage Description: SMALL OUTLINE, R-PSSO-G2ECCN Code: EAR99Manufacturer: Infineon Technologies AGRisk Rank: 7.53Additional Feature: AVALANCHE RATED, HIGH RELIABILITYAvalanche Energy Rating (Eas): 71 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 55 VDrain Current-Max (ID): 17 ADrain-source On Resistance-Max: 0.07 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSSO-G2JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 2Operating Mode: ENHANCEMENT MODEPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPulsed Drain Current-Max (IDM): 68 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrierTerminal Form: GULL WINGTerminal Position: SINGLETime Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3