IXYS IXFN180N10 | Rugged HiPerFET™ Power MOSFET for High-Current Switching
The IXYS IXFN180N10 is an N-Channel enhancement mode Power MOSFET engineered for resilience and high performance in demanding power conversion applications. Leveraging IXYS's proven HiPerFET™ technology, this device combines high current handling, low on-state resistance, and exceptional ruggedness, making it a cornerstone component for designers building robust and efficient systems.
- High Current Capability: With a continuous drain current (ID25) of 180A, it is built to manage significant power loads.
- Low Conduction Losses: The extremely low RDS(on) of just 7.5 mΩ minimizes heat generation, enabling higher system efficiency and simplifying thermal design.
- Exceptional Ruggedness: A high avalanche energy rating and an excellent dv/dt capability ensure reliable operation under strenuous conditions, including inductive load switching.
- Simplified Mounting: Housed in the industry-standard SOT-227B (miniBLOC) package, it features an isolated mounting base, streamlining assembly and enhancing thermal transfer to a heatsink.
Key Technical Specifications
For engineers requiring quick-access data for system modeling and component selection, the following parameters highlight the core capabilities of the IXFN180N10. For a complete electrical and thermal characterization, you can download the full datasheet here.
| Parameter | Value |
|---|---|
| Drain-Source Voltage (VDSS) | 100 V |
| Continuous Drain Current @ TC=25°C (ID25) | 180 A |
| Static Drain-Source On-Resistance (RDS(on)) max | 7.5 mΩ |
| Total Gate Charge (Qg) typ. | 160 nC |
| Single Pulse Avalanche Energy (EAS) | 2.5 J |
| Package Type | SOT-227B (miniBLOC) |
Application Focus: Where the IXFN180N10 Excels
While versatile, the IXFN180N10's specific characteristics make it a superior choice for several key applications:
- High-Power DC-DC Converters: Its low RDS(on) and fast switching capabilities are critical for achieving high efficiency in converters for telecom, server, and industrial power systems.
- Motor Control: In high-current industrial motor drives and traction controllers, the device's robust Safe Operating Area (SOA) and rugged internal body diode capably handle the inductive kickback and commutation stress inherent in these environments. This makes it a reliable alternative in some applications that traditionally use IGBT modules.
- Switch-Mode and Resonant-Mode Power Supplies (SMPS): The combination of low gate charge (Qg) and low output capacitance (Coss) reduces switching losses, allowing for higher operating frequencies, which in turn enables smaller magnetic components and higher power density.
- Battery Charging Systems & Welding: The high continuous current rating and excellent thermal performance of the SOT-227B package allow it to sustain the heavy, continuous loads typical in industrial battery chargers and welding power sources.
Technical Deep Dive: The HiPerFET™ Advantage
The "HiPerFET" designation is not just a marketing term; it represents a specific design philosophy focused on device ruggedness. The IXFN180N10 embodies this through its superior body diode performance. Unlike standard MOSFETs where the body diode is often a parasitic afterthought, this device features a diode with a low reverse recovery charge (Qrr) and soft recovery characteristics. In bridge-based topologies (like a motor drive inverter), this significantly reduces voltage overshoots and EMI generation during diode turn-off, protecting the device and simplifying snubber circuit design.
Engineer's FAQ for the IXFN180N10
1. How does the SOT-227B package aid in thermal management?
The SOT-227B package features an Aluminum Nitride (AlN) ceramic baseplate that is electrically isolated from the device terminals. This allows you to mount multiple modules directly onto a single, grounded heatsink without needing separate insulating pads. This design drastically simplifies assembly and lowers the overall thermal resistance from junction to heatsink, ensuring more effective heat dissipation.
2. Can the IXFN180N10 be used in parallel for higher current applications?
Absolutely. This MOSFET is well-suited for paralleling. Its RDS(on) exhibits a positive temperature coefficient, meaning as the device heats up, its on-resistance increases slightly. This characteristic promotes natural current balancing among parallel devices. If one MOSFET starts to conduct more current and gets hotter, its resistance will rise, automatically shunting current to the cooler devices. For robust design, understanding the trade-offs between MOSFETs and other technologies is key, as detailed in this guide to power semiconductor selection.
