IXYS IXFN55N50 IGBT Module

Manufacturer: IXYS

Product Category:Discrete Semiconductor Modules

RoHS: Details

Vgs - Gate-Source Voltage:- 20 V, + 20 V

Mounting Style:Chassis Mount

Package / Case:SOT-227-4

Minimum Operating Temperature:- 55 C

Maximum Operating Temperature:+ 150 C

Series:HiPerFET

Packaging:Tube

Configuration:Single

Technology:Si

Brand:IXYS

Number of Channels:1 Channel

Transistor Polarity:N-Channel

Fall Time:45 ns

Id - Continuous Drain Current:55 A

Pd - Power Dissipation:625 W

Product Type:Discrete Semiconductor Modules

Rds On - Drain-Source Resistance:90 mOhms

Rise Time:60 ns

Factory Pack Quantity:10

Subcategory:Discrete Semiconductor Modules

Tradename:HyperFET

Typical Turn-Off Delay Time:120 ns

Typical Turn-On Delay Time:45 ns

Vds - Drain-Source Breakdown Voltage: 500 V

Discrete Semiconductor Modules 55 Amps 500V 0.08 Rds