Content last revised on September 15, 2025
BSM150GB120DN2 Product details
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Manufacturer: Infineon
Product Category: IGBT Modules
Maximum Ratings (Tc=25°C)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :210A
Collector current Icp 1ms Tc=25°C :420A
Collector current Ic Continuous Tc=80°C :150A
Collector current Icp 1ms Tc=80°C :300A
Collector power dissipation Pc:1250W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
