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Infineon BSM150GB120DN2,BSM150GB120DN2 pictures,BSM150GB120DN2 supplier,BSM150GB120DN2 stock
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Infineon BSM150GB120DN2 New 2IGBT: 150A1200V;IGBT Modules 1200V 150A DUAL , BSM150GB120DN2 pictures, BSM150GB120DN2 price, BSM150GB120DN2 supplier
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Manufacturer: Infineon
Product Category: IGBT Modules
Brand: Infineon Technologies
Product: IGBT Silicon Modules
Configuration: Half Bridge
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 210 A
Gate-Emitter Leakage Current: 320 nA
Pd - Power Dissipation: 1.25 kW
Package / Case: Half Bridge2
Maximum Operating Temperature: + 150 C
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 40 C
Mounting Style: Screw
Factory Pack Quantity: 10

2IGBT: 150A1200V;IGBT Modules 1200V 150A DUAL

Shunlongwei Inspected every BSM150GB120DN2 before Ship, All BSM150GB120DN2 with 6 months warranty.
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