#Infineon, #BSM150GB120DN2, #IGBT_Module, #IGBT, BSM150GB120DN2 2IGBT: 150A1200V;IGBT Modules 1200V 150A DUAL ; BSM150GB120DN2
BSM150GB120DN2 Manufacturer: Infineon Product Category: IGBT Modules RoHS: YES Brand: Infineon Technologies Product: IGBT Silicon Modules Configuration: Half Bridge Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2.5 V Continuous Collector Current at 25 C: 210 A Gate-Emitter Leakage Current: 320 nA Pd - Power Dissipation: 1.25 kW Package / Case: Half Bridge2 Maximum Operating Temperature: + 150 C Maximum Gate Emitter Voltage: 20 V Minimum Operating Temperature: - 40 C Mounting Style: Screw Factory Pack Quantity: 10 2IGBT: 150A1200V;IGBT Modules 1200V 150A DUAL