IXYS IXGH56N60B3D1 IGBT Module

Manufacturer Part Number: IXGH56N60B3D1Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-247Package Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.63Additional Feature: LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 56 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEFall Time-Max (tf): 165 nsGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247JESD-30 Code: R-PSFM-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 330 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-247, PLASTIC PACKAGE-3