Scan Part Number

Tap the focus box or CAPTURE to scan the part number.

Pinch screen or tap 1.4x button to zoom.

Recognizing Part Number...

2MBI100NE-120 Fuji Electric 1200V 100A Dual IGBT Module

2MBI100NE-120 IGBT Module In-stock / Fuji Electric: 1200V 100A. Low thermal resistance. 90-day warranty, motor drive. Global shipping. Get quote.

· Categories: IGBT
· Manufacturer: Fuji Electric
· Price: US$ 41 In-Stock Offer
· Date Code: Please Verify on Quote
. Available Qty: 335
90-Day Warranty
Global Shipping
100% Tested
Whatsapp: 0086 189 2465 1869

Content last revised on August 4, 2026

2MBI100NE-120 Fuji Electric IGBT Module: Technical Analysis and Specifications

How do power electronic designers balance thermal efficiency and transient overload margins in high-voltage industrial inverter systems?

The Fuji Electric 2MBI100NE-120 is a dual-pack IGBT Module rated at 1200V and 100A. It is designed to handle demanding industrial power switching applications by delivering robust electrical isolation and low thermal resistance.

UVP: Delivering enhanced thermal pathways and low transient thermal impedance to ensure continuous operation in harsh industrial environments.

Top Specs: 1200V | 100A | Rth(j-c) 0.16°C/W | 780W

Key Benefits:

  • Reduces thermal bottlenecks in compact enclosures.
  • Simplifies high-frequency switching layouts.

The module’s low junction-to-case thermal resistance directly prevents premature device degradation, resolving the problem of heat accumulation during continuous inverter cycles. For 1200V motor drives prioritizing thermal margins, this 100A dual-IGBT is the optimal choice.

Frequently Asked Questions

Resolving Critical Design and Reliability Concerns

How does the maximum collector-emitter saturation voltage VCE(sat) of 3.3V impact system efficiency?

The maximum VCE(sat) of 3.3V determines conduction losses. While higher than some modern trench-gate alternatives, it is optimized for high-voltage ruggedness. What is the primary benefit of the low Rth(j-c) thermal resistance? It minimizes junction temperature rise and prevents thermal runaway under continuous loading.

What is the thermal management benefit of an Rth(j-c) of 0.16°C/W?

The low Rth(j-c) of 0.16°C/W indicates a highly efficient thermal path from the IGBT chip to the baseplate. It allows rapid heat extraction, enabling designers to use smaller heatsinks. What role does the built-in free-wheeling diode serve? It provides a low-impedance path for inductive load currents, reducing reverse recovery voltage spikes.

How does the transient thermal response of the module affect short-term overload conditions?

The transient thermal impedance curve shows the module can absorb brief peak overloads without exceeding the maximum junction temperature of 150°C.

Key Parameter Overview

Decoding the Specs for Enhanced Thermal Reliability

Review the primary technical characteristics of the Fuji Electric 2MBI100NE-120 dual-pack module. This data provides the foundation for system integration and circuit simulations.

Parameter Description Symbol Maximum Rating / Typical Value Unit
Collector-Emitter Voltage VCES 1200 V
Gate-Emitter Voltage VGES ±20 V
Continuous Collector Current (Tc=25°C) IC 100 A
Pulsed Collector Current (1ms) ICP 200 A
Maximum Power Dissipation (IGBT) PC 780 W
Junction Temperature Range Tj -40 to +150 °C
Collector-Emitter Saturation Voltage VCE(sat) 3.3 (Max) V
Thermal Resistance (Junction to Case, IGBT) Rth(j-c) 0.16 (Max) °C/W
Thermal Resistance (Junction to Case, Diode) Rth(j-c) 0.33 (Max) °C/W
Isolation Voltage (AC, 1 minute) Vis 2500 V

Download the 2MBI100NE-120 datasheet for detailed specifications and performance curves.

Technical Deep Dive

Analyzing Package Design and Thermal Limits

The 2MBI100NE-120 relies on its N-series IGBT chip architecture to achieve an optimized performance profile. Understanding its thermal management requires looking closely at the interface. The thermal resistance Rth(j-c) of 0.16°C/W serves as the main parameter to evaluate. Think of this thermal resistance as the pipe size of a drainage system. A wider pipe (lower resistance) allows heat to flow out rapidly without backing up and raising the chip temperature.

To optimize thermal dissipation, engineers must use high-quality thermal interface material (TIM). This compound fills microscopic air gaps between the baseplate and the cooling fin, reducing contact thermal resistance to 0.025°C/W. Proper torque is also required. Applying 3.5 N·m during mounting secures the module without warping the copper baseplate.

From an electrical perspective, the collector-emitter saturation voltage VCE(sat) represents the electrical friction of the IGBT. When the gate is fully biased at VGE = 15V, a small voltage drop occurs across the device. This drop acts like a toll gate where energy is dissipated as conduction loss. Engineers must account for this parameter during gate drive design. A stable gate voltage prevents the module from operating in its active region, which would otherwise lead to rapid thermal runaway.

Application Scenarios & Value

Achieving High-Reliability Motor Control and Industrial Inversion

The electrical ratings of the Fuji Electric 2MBI100NE-120 make it highly suitable for medium-power industrial applications. Designers frequently integrate these modules into a Variable Frequency Drive (VFD) to manage motor acceleration profiles. In these environments, starting a large motor draws high transient currents. The 2MBI100NE-120 supports a pulsed collector current of 200A, which provides the necessary cushion to handle startup loads.

In addition to standard VFDs, the module is regularly utilized in AC and DC Servo Drives. These drives require rapid response times and tight speed regulation. The dual-IGBT configuration allows compact half-bridge layouts, minimizing parasitic inductance and electromagnetic interference. This design ease is critical for systems complying with industrial noise standards such as IEC 61800-3.

For applications requiring higher current handling capacity within similar voltage classes, the related 2MBI200N-120 offers a 200A collector current rating. Alternatively, for designs targeting specialized high-speed switching topologies, the 2MBI100NC-120 provides a tailored alternative. Both options allow designers to scale system capacity without changing the fundamental circuit layout.

Ultimately, selecting the right module variant establishes a foundation for scalable, high-efficiency power architectures. By evaluating peak currents and thermal paths early in the design cycle, engineers ensure long-term system reliability while maintaining cost-effective manufacturing pipelines.

More from Fuji Electric

Fuji Electric
Fuji Electric
Fuji Electric
Fuji Electric
Fuji Electric
Fuji Electric