#Fuji, #2MBI150F_120, #IGBT_Module, #IGBT, 2MBI150F-120 FUJI Insulated Gate Bipolar Transistor, 150A 1200V
Features
Low Saturation Voltage
Voltage Drive
Variety of Power Capacity Series
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial Machines, such as Welding Machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :150A
Collector current Icp 1ms Tc=25°C :300A
Collector power dissipation Pc:1080W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 3.5 *1 N·m
Weight 400g