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Fuji 6MBI75FA-060 IGBT Module

6MBI75FA-060

6MBI75FA-060 Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel; 6MBI75FA-060

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$
· Date Code: 2017+
. Available Qty: 353
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6MBI75FA-060 Specification

Manufacturer Part Number: 6MBI75FA-060
Ihs Manufacturer: FUJI ELECTRIC CO LTD
Package Description: FLANGE MOUNT, R-PUFM-X11
Pin Count: 11
Manufacturer: Fuji Electric Co Ltd
Risk Rank: 8.45
Collector Current-Max (IC): 75 A
Collector-Emitter Voltage-Max: 600 V
Gate-Emitter Voltage-Max: 20 V
JESD-30 Code: R-PUFM-X11
Number of Elements: 6
Number of Terminals: 11
Package Body Material: PLASTIC/EPOXY
Package Shape: RECTANGULAR
Package Style: FLANGE MOUNT
Polarity/Channel Type: N-CHANNEL
Power Dissipation-Max (Abs): 290 W
Qualification Status: Not Qualified
Subcategory: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Form: UNSPECIFIED
Terminal Position: UPPER
Transistor Application: POWER CONTROL
Transistor Element Material: SILICON
Turn-off Time-Nom (toff): 1500 ns
Turn-on Time-Nom (ton): 1500 ns
VCEsat-Max: 2.5 V
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel

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