#IXYS, #IXGX82N120A3, #IGBT_Module, #IGBT, IXGX82N120A3 Insulated Gate Bipolar Transistor, 260A I(C), 1200V V(BR)CES, N-Channel, PULS247, 3 PIN; IXGX82N120A3
Manufacturer Part Number: IXGX82N120A3Pbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer: IXYS CorporationRisk Rank: 5.66Additional Feature: LOW CONDUCTION LOSSCase Connection: COLLECTORCollector Current-Max (IC): 260 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PSIP-T3JESD-609 Code: e1Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 1250 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Finish: TIN SILVER COPPERTerminal Form: THROUGH-HOLETerminal Position: SINGLETime Insulated Gate Bipolar Transistor, 260A I(C), 1200V V(BR)CES, N-Channel, PULS247, 3 PIN