Description:
Mitsubishi IGBT Modules are de-signed for use in switching appli-cations. Each module consists ofsix IGBTs in a three phase bridgeconfiguration, with each transistorhaving a reverse-connected super-fast recovery free-wheel diode. Allcomponents and interconnects areisolated from the heat sinkingbaseplate, offering simplified sys-tem assembly and thermal man-agement.
Features:
Low Drive Power
Low VCE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :50A
Collector current Icp 1ms Tc=25°C :100A
Collector power dissipation Pc:400W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 1.47~1.96 N·m
Weight 540g
