Mitsubishi CM1200E4C-34N IGBT Module

CM1200E4C-34N

HIGH POWER SWITCHING USE INSULATED TYPE

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

Insulated Type

1-element in a Pack (for brake)

AISiC Baseplate

Trench Gate IGBT : CSTBT™

Soft Reverse Recovery Diode

MAXIMUM RATINGS

• Collector-emitter voltage: VGE=0V, Tj=25°C: 1700V
• Gate-emitter voltage: VCE =0V, Tj=25°C: ±20V
• Collector current (Continuous): Tc=75°C: 1200A
• Collector current Pulse (Note 1): 2400A
• Emitter current Pulse (Note 1): 2400A
• Maximum power dissipation: Tc =25°C, IGBT part: 6500W
• Junction temperature (Operating temperature): -40~+150°C
• Storage temperature: -40~+125°C
• Isolation voltage: RMS, sinusoidal, f =60Hz, t=1min.: 4000V