Content last revised on August 8, 2025
CM1200E4C-34N
HIGH POWER SWITCHING USE INSULATED TYPE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Insulated Type
1-element in a Pack (for brake)
AISiC Baseplate
Trench Gate IGBT : CSTBT™
Soft Reverse Recovery Diode
MAXIMUM RATINGS
- Collector-emitter voltage: VGE=0V, Tj=25°C: 1700V
- Gate-emitter voltage: VCE =0V, Tj=25°C: ±20V
- Collector current (Continuous): Tc=75°C: 1200A
- Collector current Pulse (Note 1): 2400A
- Emitter current Pulse (Note 1): 2400A
- Maximum power dissipation: Tc =25°C, IGBT part: 6500W
- Junction temperature (Operating temperature): -40~+150°C
- Storage temperature: -40~+125°C
- Isolation voltage: RMS, sinusoidal, f =60Hz, t=1min.: 4000V
