Mitsubishi CM2400HCB-34N IGBT Module

CM2400HCB-34N

HIGH POWER SWITCHING USE INSULATED TYPE

●IC...............................................................2400 A

●VCES ......................................................1700 V

●Insulated Type

●1-element in a Pack

●AISiC Baseplate

●Trench Gate IGBT : CSTBTTM

●Soft Reverse Recovery Diode

MAXIMUM RATING

• VCES (Collector-emitter voltage): 1700V
• VGES (Gate-emitter voltage): ±20V
• IC (Collector current): DC, Tc = 80°C
• ICM (Peak Collector current): Pulse (Note 1)
• IE (Emitter current): DC
• IEM (Peak Emitter current): Pulse (Note 1)
• Pc (Maximum power dissipation): Tc = 25°C, IGBT part
• Viso (Isolation voltage): RMS, sinusoidal, f = 60Hz, t = 1 min.
• Tj (Junction temperature): -40 ~ +150°C
• Top (Operating temperature): -40 ~ +125°C
• Tstg (Storage temperature): -40 ~ +125°C
• tpsc (Maximum short circuit pulse width): VGE = 0V, Tj = 25°C, VCE = 0V, Tj = 25°C, VCC = 1000V, VCE≤ VCES, VGE = 15V, Tj = 125°C: 10μs