CM2400HCB-34N
HIGH POWER SWITCHING USE INSULATED TYPE
●IC...............................................................2400 A
●VCES ......................................................1700 V
●Insulated Type
●1-element in a Pack
●AISiC Baseplate
●Trench Gate IGBT : CSTBTTM
●Soft Reverse Recovery Diode
MAXIMUM RATING
- VCES (Collector-emitter voltage): 1700V
- VGES (Gate-emitter voltage): ±20V
- IC (Collector current): DC, Tc = 80°C
- ICM (Peak Collector current): Pulse (Note 1)
- IE (Emitter current): DC
- IEM (Peak Emitter current): Pulse (Note 1)
- Pc (Maximum power dissipation): Tc = 25°C, IGBT part
- Viso (Isolation voltage): RMS, sinusoidal, f = 60Hz, t = 1 min.
- Tj (Junction temperature): -40 ~ +150°C
- Top (Operating temperature): -40 ~ +125°C
- Tstg (Storage temperature): -40 ~ +125°C
- tpsc (Maximum short circuit pulse width): VGE = 0V, Tj = 25°C, VCE = 0V, Tj = 25°C, VCC = 1000V, VCE≤ VCES, VGE = 15V, Tj = 125°C: 10μs
