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IXYS IXSN55N120AU1 New IGBT Module

#IXYS, #IXSN55N120AU1, #IGBT_Module, #IGBT, IXSN55N120AU1 Insulated Gate Bipolar Transistor 110A I(C) 1200V V(BR)CES N-Channel MINIBLOC-4; IXSN55N120AU1

· Categories: IGBT Module
· Manufacturer: IXYS
· Price: US$
· Date Code: 2021+
. Available Qty: 399
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IXSN55N120AU1 Specification

Sell IXSN55N120AU1, #IXYS #IXSN55N120AU1 New Stock, IXSN55N120AU1 Insulated Gate Bipolar Transistor 110A I(C) 1200V V(BR)CES N-Channel MINIBLOC-4; IXSN55N120AU1, #IGBT_Module, #IGBT, #IXSN55N120AU1
Email: sales@shunlongwei.com
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Manufacturer Part Number: IXSN55N120AU1

Pbfree Code: Yes

Manufacturer: IXYS CORP

Package Description: MINIBLOC-4

Pin Count: 4

Additional Feature: HIGH SPEED

Case Connection: ISOLATED

Collector Current-Max (IC): 110 A

Collector-Emitter Voltage-Max: 1200 V

Configuration: SINGLE WITH BUILT-IN DIODE

Gate-Emitter Thr Voltage-Max: 8 V

Gate-Emitter Voltage-Max: 20 V

JESD-30 Code: R-XUFM-X4

Number of Elements: 1

Number of Terminals: 4

Operating Temperature-Max: 150 °C

Package Body Material: UNSPECIFIED

Package Shape: RECTANGULAR

Package Style: FLANGE MOUNT

Peak Reflow Temperature (Cel): NOT SPECIFIED

Polarity/Channel Type: N-CHANNEL

Power Dissipation Ambient-Max: 500 W

Power Dissipation-Max (Abs): 500 W

Subcategory: Insulated Gate BIP Transistors

Surface Mount: NO

Terminal Finish: Nickel (Ni)

Terminal Form: UNSPECIFIED

Terminal Position: UPPER

Time

Insulated Gate Bipolar Transistor 110A I(C) 1200V V(BR)CES N-Channel MINIBLOC-4

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