IXYS IXTQ52P10P IGBT Module

Manufacturer Part Number: IXTQ52P10PPbfree Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: TO-3PPackage Description: FLANGE MOUNT, R-PSFM-T3Pin Count: 3ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 1.72Additional Feature: AVALANCHE RATEDAvalanche Energy Rating (Eas): 1500 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 100 VDrain Current-Max (Abs) (ID): 52 ADrain Current-Max (ID): 52 ADrain-source On Resistance-Max: 0.05 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PSFM-T3JESD-609 Code: e3Number of Elements: 1Number of Terminals: 3Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 300 WPulsed Drain Current-Max (IDM): 130 AQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: NOTerminal Finish: Matte Tin (Sn)Terminal Form: THROUGH-HOLETerminal Position: SINGLETime Power Field-Effect Transistor, 52A I(D), 100V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN