#IXYS, #IXXR100N60B3H1, #IGBT_Module, #IGBT, IXXR100N60B3H1 Insulated Gate Bipolar Transistor, 145A I(C), 600V V(BR)CES, N-Channel, PLASTIC, ISOPLUS247, 3 PIN; IXXR1
Manufacturer Part Number: IXXR100N60B3H1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPart Package Code: ISOPLUSPackage Description: IN-LINE, R-PSIP-T3Pin Count: 3Manufacturer Package Code: ISOPLUSManufacturer: IXYS CorporationRisk Rank: 2.34Additional Feature: AVALANCHE RATEDCase Connection: ISOLATEDCollector Current-Max (IC): 145 ACollector-Emitter Voltage-Max: 600 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5.5 VGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-PSIP-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: IN-LINEPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 400 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 350 nsTurn-on Time-Nom (ton): 92 ns Insulated Gate Bipolar Transistor, 145A I(C), 600V V(BR)CES, N-Channel, PLASTIC, ISOPLUS247, 3 PIN