#IXYS, #IXYH20N120C3D1, #IGBT_Module, #IGBT, IXYH20N120C3D1 Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247AD,; IXYH20N120C3D1
Manufacturer Part Number: IXYH20N120C3D1Rohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: IXYS CORPPackage Description: FLANGE MOUNT, R-PSFM-T3ECCN Code: EAR99Manufacturer: IXYS CorporationRisk Rank: 2.18Case Connection: COLLECTORCollector Current-Max (IC): 36 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Thr Voltage-Max: 5 VGate-Emitter Voltage-Max: 20 VJEDEC-95 Code: TO-247ADJESD-30 Code: R-PSFM-T3Number of Elements: 1Number of Terminals: 3Operating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 230 WSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: THROUGH-HOLETerminal Position: SINGLETransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 220 nsTurn-on Time-Nom (ton): 60 ns Insulated Gate Bipolar Transistor, 36A I(C), 1200V V(BR)CES, N-Channel, TO-247AD,