IXYS MEO450-12DA(H) IGBT Module

Features
. International standard package with DCB ceramic base plate
. Planar passivated chips
. Short recovery time
. Low switching losses
. Soft recovery behaviour
. Isolation voltage 3600 V
Applications
. Antiparallel diode for high frequencyswitching devices
. Free wheeling diode in convertersand motor control circuits
. Inductive heating and melting
. Uninterruptible power supplies (UPS)
. Ultrasonic cleaners and welders
Advantages
. High reliability circuit operation
. Low voltage peaks for reducedprotection circuits
. Low noise switching
. Low losses
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-emitter voltage Tvj = 25°C,VCES 1200 V
Continuous DC collector current 453A
Repetitive peak collector currentt ICRM 900A
Total power dissipation Ptot 1750 W
Gate-emitter peak voltage VGES +/-20V
Temperature under switching conditions Tvj op-40~150°C
Weight 150g