Feature
a) Adopting new 5th generation IGBT chip, vhich performance is improvedloy forexample, typical Vce(sat)=1.9V Tj=125°C
b) I adopt the over-temperature conservation by Tj detection of CSTBT chip, and error output is possible from all each con-servation upper and lower arm of IPM.
c) New small package Reduce the package size by 10%, thickmess by 22% from S-DASH series.
d) 75A,1200V Current-sense IGBT type inverter
. Monolithic gate drive & protection logic
. Detection, protection & under-voltage(P-Fo avaiable form upper arm devices).
. Acoustic noise-less 11kW / 15 kW class inverter applichition
Maximum ratings and characteristics
.Absolute maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :75A
Collector current Icp 1ms Tc=25°C :150A
Collector power dissipation Pc:595W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2.5~3.5 N·m
Weight 380g
