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NIEC PRHMB100B12A New IGBT Module

#NIEC, #PRHMB100B12A, #IGBT_Module, #IGBT, PRHMB100B12A Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; PRHMB100B12A

· Categories: IGBT Module
· Manufacturer: NIEC
· Price: US$
· Date Code: 11+
. Available Qty: 281
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PRHMB100B12A Specification

Sell PRHMB100B12A, #NIEC #PRHMB100B12A New Stock, PRHMB100B12A Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-5; PRHMB100B12A, #IGBT_Module, #IGBT, #PRHMB100B12A
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Manufacturer Part Number: PRHMB100B12APart Life Cycle Code: ActiveIhs Manufacturer: KYOCERA CORPPackage Description: FLANGE MOUNT, R-XUFM-X5Manufacturer: KYOCERA CorporationRisk Rank: 5.16Case Connection: ISOLATEDCollector Current-Max (IC): 100 ACollector-Emitter Voltage-Max: 1200 VConfiguration: SINGLE WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X5Number of Elements: 1Number of Terminals: 5Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 500 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Application: POWER CONTROLTransistor Element Material: SILICONTurn-off Time-Nom (toff): 800 nsTurn-on Time-Nom (ton): 400 nsVCEsat-Max: 2.4 V Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-5

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