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NIEC PDMB200B12C IGBT Module

PDMB200B12C NIEC Insulated Gate Bipolar Transistor, 200A 1200V

· Categories: IGBT Module
· Manufacturer: NIEC
· Price: US$
· Date Code: 2024+
. Available Qty: 259
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PDMB200B12C Specification

Maximum ratings (Tc=25°C unless without specified)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic Continuous Tc=25°C :200A
Collector current Icp 1ms Tc=25°C :400A
Collector power dissipation Pc:960W
Isolation Voltage VIsol (AC 1 minute) :2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C

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