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Fuji 2MBI300HH-120 IGBT Module

Fuji Electric 2MBI300HH-120: A 1200V, 300A high-speed dual IGBT module. Delivers low switching loss, boosting power density in high-frequency welding, UPS, and induction heating.

· Categories: IGBT Module
· Manufacturer: Fuji
· Price: US$ 54
· Date Code: 2019+
. Available Qty: 552
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2MBI300HH-120 Specification

Fuji Electric 2MBI300HH-120 | High-Frequency Power Module for Demanding Applications

The Fuji Electric 2MBI300HH-120 is a high-performance dual IGBT module engineered for power conversion systems where speed, efficiency, and reliability are non-negotiable. This 1200V, 300A half-bridge module is part of Fuji's renowned High-Speed (HH) series, specifically optimized for applications operating at elevated switching frequencies. By integrating two IGBTs in a standard M239 package, it provides a robust, thermally efficient solution for designers of industrial welding equipment, uninterruptible power supplies (UPS), and induction heating systems.

Engineered for Speed and Efficiency

The performance of the 2MBI300HH-120 is rooted in its advanced chip technology, which strikes a critical balance between switching performance and on-state losses. This isn't just another power switch; it's a finely tuned component for dynamic loads.

  • High-Speed Switching: The 'HH' designation signifies its optimization for speed. The module features reduced turn-on (Eon) and turn-off (Eoff) energies, which minimizes Switching Loss. For engineers, this directly translates into the ability to design systems with higher operating frequencies. Higher frequencies allow for the use of smaller, lighter, and more cost-effective inductors and capacitors, leading to a significant increase in overall power density and a reduction in system footprint.
  • Optimized Conduction Loss: While speed is paramount, efficiency is not sacrificed. The module features a low collector-emitter saturation voltage (VCE(sat)) of 2.2V (typical at 300A, 125°C). This low on-state voltage drop reduces conduction losses, meaning less waste heat is generated during operation. The result is improved thermal performance, reduced heatsink requirements, and enhanced long-term reliability of the end equipment.

Proven Performance in High-Frequency Power Conversion

The specific design characteristics of the 2MBI300HH-120 make it an ideal choice for several challenging industrial applications. Its value is demonstrated not just by its specifications, but by how it solves real-world engineering problems:

  • Welding Power Supplies: In modern resonant and inverter-based welders, fast and precise control of the power stage is essential for stable arc characteristics. The module's high-speed switching capability enables the fine control needed for advanced welding processes, delivering consistent quality and efficiency.
  • Uninterruptible Power Supplies (UPS): For data centers and critical infrastructure, the drive for higher power density is relentless. The 2MBI300HH-120 allows for more compact UPS designs by operating at higher frequencies, reducing the physical size of magnetic components without compromising the system's efficiency or reliability.
  • Induction Heating: The ability to deliver rapid, controlled power cycles is the core of effective high-frequency induction heating. This module's robust performance and fast switching ensure efficient energy transfer to the workpiece, enabling faster process times and superior metallurgical results.

At-a-Glance Technical Specifications

For a detailed breakdown of all parameters, engineers can Download the 2MBI300HH-120 Datasheet.

Parameter Value
Collector-Emitter Voltage (VCES) 1200V
Continuous Collector Current (IC) at TC=80°C 300A
Collector-Emitter Saturation Voltage (VCE(sat)) at IC=300A 2.2V (Typ)
Maximum Junction Temperature (Tjmax) 150°C
Package M239

Engineer's FAQ for the 2MBI300HH-120

What are the key considerations for the gate drive design for this module?
To fully leverage the high-speed capabilities of the 2MBI300HH-120, a well-executed gate drive circuit is crucial. First, utilize the auxiliary Kelvin Emitter connection to bypass stray inductance in the main emitter path, ensuring a clean gate signal and minimizing switching oscillations. Second, applying a negative gate voltage (e.g., -5V to -15V) during the off-state is highly recommended to provide robust immunity against dv/dt induced turn-on. For more insights, explore these 5 practical tips for robust IGBT gate drive design.

How does this module compare to standard-speed IGBTs?
Compared to general-purpose or low-VCE(sat) IGBT modules, the 2MBI300HH-120 prioritizes lower switching losses at the expense of slightly higher conduction losses. This makes it the superior choice for applications running above ~10-15 kHz, where switching losses become the dominant factor in overall system inefficiency. For lower frequency applications, like standard motor drives, a module with a lower VCE(sat) might be more appropriate. For help with your specific application, please contact our technical team.

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