Content last revised on November 20, 2025
BSM25GD120DN2E: 1200V Dual IGBT Module for Industrial Power Conversion
Introduction & Core Value
The BSM25GD120DN2E is a legacy 1200V IGBT power module designed for efficiency and reliability in three-phase power conversion systems. This module integrates a dual IGBT configuration, making it a foundational component for compact motor drives, UPS, and welding applications. Key specifications include: 1200V | 25A (Tc=80°C) | VCE(sat) 2.5V (typ). It delivers two primary engineering benefits: simplified thermal management via its insulated metal baseplate and robust performance under demanding industrial conditions. What is the module's key design advantage for designers of small motor drives? Its integrated fast free-wheeling diodes and dual configuration simplify the inverter power stage design and layout. For industrial drives below 11 kW requiring proven technology, this 1200V module provides a well-characterized and dependable solution.
Key Parameter Overview
Decoding the Electrical and Thermal Specifications
The technical specifications of the BSM25GD120DN2E are architected to provide dependable performance in hard-switching applications. The parameters outlined below are critical for accurate system modeling, thermal design, and ensuring operational reliability. Note the balance between conduction losses, indicated by VCE(sat), and the module's thermal dissipation capability.
| Parameter | Value | Conditions |
|---|---|---|
| Collector-Emitter Voltage (Vces) | 1200 V | Tvj = 25°C |
| Continuous Collector Current (IC) | 35 A | Tc = 25°C |
| Continuous Collector Current (IC) | 25 A | Tc = 80°C |
| Pulsed Collector Current (Icp) | 50 A | tp = 1 ms, Tc = 80°C |
| Gate-Emitter Voltage (VGE) | ±20 V | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 2.5 V (typ) / 3.0 V (max) | IC = 25 A, VGE = 15 V, Tvj = 25°C |
| Total Power Dissipation (Ptot) | 200 W | per IGBT, Tc = 25°C |
| Junction Temperature (Tvj op) | -40 to +125°C | Operating |
| Thermal Resistance, Chip to Case (RthJC) | 0.6 K/W | per IGBT |
Download the BSM25GD120DN2E datasheet for detailed specifications and performance curves.
Application Scenarios & Value
System-Level Benefits in Motor Drive and Power Supply Applications
The BSM25GD120DN2E is engineered for core industrial applications where reliability and electrical performance are paramount. Its 1200V blocking voltage provides a substantial safety margin for systems operating on 380V to 480V AC lines, making it a robust choice for a range of equipment.
A primary application is in low-power Variable Frequency Drives (VFDs), typically under 11 kW. In this context, the module's most critical parameter is its thermal resistance (RthJC). A lower thermal resistance value means heat generated within the IGBT chip can be more effectively transferred to the heatsink. For an engineer designing a compact VFD, the 0.6 K/W RthJC of the BSM25GD120DN2E directly translates to a smaller, more cost-effective heatsink or the ability to operate at higher ambient temperatures without derating, simplifying the overall mechanical design of the Servo Drive. Other key applications include:
- Uninterruptible Power Supplies (UPS)
- Industrial welding equipment
- Switched Mode Power Supplies (SMPS)
While this module is well-suited for these applications, for systems requiring lower power, the related BSM10GD120DN2 offers a lower current rating. Conversely, for applications demanding higher power handling, the BSM50GD120DN2 provides a higher current capacity within a similar voltage class.
FAQ
Engineering Q&A: Performance and Implementation
How does the typical VCE(sat) of 2.5V at 25A impact system efficiency?
A VCE(sat) of 2.5V is the forward voltage drop across the IGBT when it is fully turned on. This value is a direct contributor to conduction losses. The relationship is simple: Power Loss = VCE(sat) * Collector Current. At 25A, this module will generate approximately 62.5 watts of heat from conduction losses per switch. Engineers must factor this into their thermal management calculations to ensure the junction temperature remains within the specified safe operating area. For more on this, see our guide to decoding IGBT datasheets.
What are the design implications of the module's maximum operating junction temperature of 125°C?
The 125°C limit defines the thermal ceiling for the semiconductor. Modern IGBTs often reach 150°C or 175°C. This lower rating means designers must be more conservative with their thermal design, ensuring the cooling system can maintain the junction temperature below 125°C under worst-case load and ambient temperature conditions. It underscores the importance of the RthJC value in heatsink selection and system airflow design to ensure long-term reliability.
Does this module include an NTC thermistor for temperature monitoring?
Based on the standard datasheet for this part number, an integrated NTC thermistor is not specified as a standard feature. Systems requiring direct temperature feedback for over-temperature protection or control loops would need to implement an external temperature sensor mounted close to the module's baseplate.
Technical Deep Dive
A Closer Look at Classic IGBT Technology
The BSM25GD120DN2E is a representative of well-established NPT (Non-Punch-Through) IGBT technology. Unlike more modern Trench-Gate Field-Stop (TFS) technologies, NPT IGBTs are characterized by a thicker n-base and a different doping profile. This construction results in specific performance trade-offs that are crucial for engineers to understand.
The key characteristic of NPT technology is its positive temperature coefficient for the saturation voltage (VCE(sat)). This means that as the device heats up, the VCE(sat) increases. While this leads to slightly higher conduction losses at temperature, it is highly beneficial when paralleling modules. The natural tendency for a hotter device to conduct less current creates a self-balancing effect, preventing thermal runaway in one of the parallel IGBTs. This inherent robustness simplifies the design of higher-power systems that require IGBT Paralleling, a common practice in larger motor drives or inverters.
Strategic Role in System Design
The BSM25GD120DN2E serves as a foundational building block for cost-sensitive industrial applications that prioritize proven reliability over cutting-edge performance metrics. Its value proposition is not in achieving the lowest possible switching losses but in providing a robust, well-understood component that simplifies the power stage design. For engineering teams tasked with developing durable, long-life industrial equipment, this module offers a dependable platform with predictable performance, reducing design risks and accelerating time-to-market. For deeper insights into balancing component selection, explore our analysis on the core trio of IGBT module selection criteria.
