Content last revised on December 29, 2025
Infineon FZ600R17KE3_S4 Single IGBT Module 1700V 600A Engineering Analysis
The FZ600R17KE3_S4, manufactured by Infineon (formerly Eupec), represents a cornerstone in high-power semiconductor design, specifically engineered for demanding industrial environments. As a professional distributor, we recognize that selecting the right power module requires more than just looking at peak current; it necessitates a thorough understanding of thermal overhead and switching characteristics. This module utilizes the Trenchstop™ IGBT3 technology paired with Emitter Controlled diodes to offer a reliable solution for high-voltage switching. By prioritizing thermal stability and electrical ruggedness, the FZ600R17KE3_S4 enables engineers to design systems with higher power densities without compromising long-term reliability.
UVP Statement: This module delivers a specialized 1700V | 600A configuration in a compact 62mm package, optimizing the balance between high-voltage insulation and low conduction losses.
Top Specs: 1700V Vces | 600A Ic | 150°C maximum junction temperature.
Key Benefits: Enhanced thermal cycling capability and 10µs short-circuit ruggedness.
Core Question: How does the FZ600R17KE3_S4 handle high-inductive loads? Its integrated Emitter Controlled diode provides soft-recovery characteristics, minimizing voltage spikes during aggressive switching transitions. For 1700V rail or industrial drive systems prioritizing thermal margin, this 600A module is the optimal choice.
Key Parameter Overview
Decoding the Specs for Enhanced Thermal Reliability
The technical performance of the FZ600R17KE3_S4 is defined by its ability to manage heat while switching large currents at high voltages. The following table highlights the critical operating parameters sourced from the official technical documentation.
| Critical Specification | Official Rating / Value | Engineering Significance |
|---|---|---|
| Collector-Emitter Voltage (Vces) | 1700V | Provides safe margin for 690V AC line applications. |
| Continuous DC Collector Current (Ic) | 600A (at Tc=80°C) | Defines the steady-state load handling capability. |
| Saturation Voltage (Vce(sat)) | Typ. 2.00V (at Tj=125°C) | Determines conduction loss and overall system efficiency. |
| Short-Circuit Withstand Time (tsc) | 10µs (at Vge=15V, Vcc=1000V) | Critical for fault protection in Variable Frequency Drives. |
| Thermal Resistance (Rthjc) | 0.035 K/W (IGBT part) | Directly impacts heatsink sizing and power density. |
Download the FZ600R17KE3_S4 datasheet for detailed specifications and performance curves. Request Datasheet Access
Application Scenarios & Value
Achieving System-Level Benefits in High-Frequency Power Conversion
The FZ600R17KE3_S4 is primarily utilized in sectors where downtime is not an option. Its 1700V rating is specifically tailored for 690V AC grid-connected systems, such as Wind Power converters and heavy-duty Variable Frequency Drives (VFDs). In these scenarios, the 10µs short-circuit withstand time acts as a vital safety buffer, allowing the gate driver enough time to detect a fault and shut down the module safely before catastrophic failure occurs.
Consider the challenge of a Solar Inverter operating in high-ambient-temperature regions. The low Vce(sat) of the IGBT3 chip reduces the heat generated during the "on" state. To visualize this, think of the Thermal Resistance (Rthjc) as a "thermal dam." A lower K/W rating means the dam is shorter and wider, allowing heat to flow away from the silicon chip to the heatsink much more effectively, preventing localized hotspots that lead to premature aging. For systems requiring even higher current handling, the FZ2400R17KE3_S1 offers a significantly higher Ic rating for centralized inverter designs. If your design is focused on lower power tiers, the FZ400R17KE3 provides a similar 1700V platform at a 400A rating.
This module is also a preferred component for Uninterruptible Power Supplies (UPS) and Medical Imaging equipment like CT scanners, where precise Gate Drive control and low electromagnetic interference (EMI) are essential. By integrating this module, engineers can align with IEC 61800-3 standards for EMC compliance more easily due to its soft-switching characteristics.
Technical Deep Dive
A Closer Look at the Trench-Gate Structure and Thermal Dissipation
The core of the FZ600R17KE3_S4 reliability lies in its Trenchstop™ IGBT3 architecture. Unlike traditional planar IGBTs, the trench structure allows for a higher cell density, which significantly lowers the Vce(sat). This efficiency gain is not just a theoretical number; it translates directly to reduced cooling requirements. In high-power applications, every watt saved in conduction loss is a watt that doesn't need to be dissipated by an expensive liquid-cooling system or a massive copper heatsink.
Furthermore, the Emitter Controlled diode used in this module is designed for "soft" recovery. During the turn-off phase, a standard diode can snap off quickly, creating high-frequency oscillations and voltage overshoots. The FZ600R17KE3_S4 diode acts like a "hydraulic shock absorber," gradually ramping down the current to dampen ringing. This protects the IGBT from overvoltage stress and reduces the burden on the Snubber Circuit. To further explore these concepts, we recommend reviewing our guide on Why Rth Matters: Unlocking IGBT Thermal Performance.
FAQ
How does the 150°C maximum junction temperature benefit my design?
The 150°C rating provides a higher safety margin during transient overloads. However, for continuous operation, keeping the junction temperature lower will significantly extend the Power Cycling Capability of the module. For more on this, see our resource on the core trio of IGBT selection.
Is the FZ600R17KE3_S4 compatible with standard 62mm gate drivers?
Yes, it follows the industry-standard footprint. However, due to its 600A capacity, engineers must ensure the Gate Drive circuit can provide sufficient peak current to charge and discharge the input capacitance quickly enough to minimize switching losses.
What is the primary benefit of the Trenchstop™ IGBT3 technology?
It minimizes the trade-off between switching speed and conduction losses. This allows for higher efficiency in applications like Variable Frequency Drives where the module switches at frequencies between 2kHz and 10kHz.
How does the S4 suffix affect my procurement?
The S4 suffix often refers to specific housing modifications or terminal materials defined by Infineon. While the core electrical specs like 1700V and 600A remain consistent with the standard series, always verify mechanical drawings to ensure fitment in existing busbar configurations.
From a strategic perspective, adopting the FZ600R17KE3_S4 allows manufacturers to standardize their power blocks across various 1700V applications. By leveraging a module with a proven track record in Thermal Management and ruggedness, OEMs can reduce the Total Cost of Ownership (TCO) through decreased field failures and simplified maintenance cycles in the evolving global power electronics market.
