Infineon BSM50GD120DN2 IGBT Module

IGBT Technology NPT (Non-Punch Through) IGBT
Voltage Rating 1200V
Current Rating 50A
Power Dissipation 350W
Collector-Emitter Voltage (VCE) 1200V
Switching Frequency 0-20 kHz
Collector-Emitter Saturation Voltage (VCE(sat)) 2.0V (typical)
Gate Threshold Voltage (VGE(th)) 6V (typical)
Operating Temperature Range -40°C to +150°C
Storage Temperature Range -55°C to +150°C
Thermal Resistance Junction to Case (RthJC) 0.2 K/W
Mounting Style Screw Mount
Weight Approx. 450g