#NIEC, #PTMB50B12, #IGBT_Module, #IGBT, PTMB50B12 Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19; PTMB50B12
Manufacturer Part Number: PTMB50B12Part Life Cycle Code: ActiveIhs Manufacturer: KYOCERA CORPPackage Description: FLANGE MOUNT, R-XUFM-X19Manufacturer: KYOCERA CorporationRisk Rank: 5.16Case Connection: ISOLATEDCollector Current-Max (IC): 50 ACollector-Emitter Voltage-Max: 1200 VConfiguration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODEGate-Emitter Voltage-Max: 20 VJESD-30 Code: R-XUFM-X19Number of Elements: 6Number of Terminals: 19Operating Temperature-Max: 150 °CPackage Body Material: UNSPECIFIEDPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 250 WQualification Status: Not QualifiedSubcategory: Insulated Gate BIP TransistorsSurface Mount: NOTerminal Form: UNSPECIFIEDTerminal Position: UPPERTransistor Element Material: SILICONTurn-off Time-Nom (toff): 800 nsTurn-on Time-Nom (ton): 400 nsVCEsat-Max: 2.4 V Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, SIXPACK-19