#STMicroelectronics, #SD56120, #IGBT_Module, #IGBT, SD56120 120W 28V HF to 1GHz LDMOS TRANSISTOR in push-pull package; SD56120
Manufacturer Part Number: SD56120Brand Name: STMicroelectronicsPart Life Cycle Code: Not RecommendedIhs Manufacturer: STMICROELECTRONICSPackage Description: FLANGE MOUNT, R-PDFM-F4Pin Count: 4ECCN Code: EAR99Manufacturer: STMicroelectronicsRisk Rank: 7.5Case Connection: SOURCEConfiguration: COMMON SOURCE, 2 ELEMENTSDS Breakdown Voltage-Min: 65 VDrain Current-Max (Abs) (ID): 14 ADrain Current-Max (ID): 14 AFET Technology: METAL-OXIDE SEMICONDUCTORHighest Frequency Band: ULTRA HIGH FREQUENCY BANDJESD-30 Code: R-PDFM-F4Number of Elements: 2Number of Terminals: 4Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 200 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: FLANGE MOUNTPeak Reflow Temperature (Cel): NOT SPECIFIEDPolarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 217 WQualification Status: Not QualifiedSubcategory: FET General Purpose PowerSurface Mount: YESTerminal Form: FLATTerminal Position: DUALTime 120W 28V HF to 1GHz LDMOS TRANSISTOR in push-pull package