Vishay Siliconix SI5509DC-T1-GE3 IGBT Module

Manufacturer Part Number: SI5509DC-T1-GE3Pbfree Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPackage Description: SMALL OUTLINE, R-PDSO-C8Pin Count: 8ECCN Code: EAR99Manufacturer: Vishay SiliconixRisk Rank: 5.8Configuration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (ID): 5 ADrain-source On Resistance-Max: 0.052 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-C8JESD-609 Code: e3Moisture Sensitivity Level: 1Number of Elements: 1Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNEL AND P-CHANNELPulsed Drain Current-Max (IDM): 10 AQualification Status: Not QualifiedSurface Mount: YESTerminal Finish: PURE MATTE TINTerminal Form: C BENDTerminal Position: DUALTime N-AND P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel