Toshiba MG50Q6ES40 is a power transistor module that designed for use in high power switching applications, widely use in motor control, welding equipment, and power supplies. The module(MG50Q6ES40) is made up of six insulated gate bipolar transistors (IGBTs) with a current rating 50 amperes and voltage rating 600 volts.
MG50Q6ES40 module has a low on-state voltage drop and fast switching speeds, It features built-in overcurrent protection, overtemperature protection, and short circuit protections.
The module(MG50Q6ES40) is housed in a compact and rugged package that can withstand high levels of shock and vibration.
MG50Q6ES40 Description
. The Elect rodes are Isolated from Case.
. 6 IGBTS are Built Into 1 Package.
. Enhancement-Mode
. Low Saturation Voltage
: VCE(sat)=4.0V(Max)
. High Speed : tf=0.5us(Max.)
Features
· Low VCE(sat)
· Compact package
· P.C. board mount
· Converter diode bridge, Dynamic brake circuit
Applications
· Inverter for motor drive
· AC and DC servo drive amplifier
· Uninterruptible power supply
Maximum ratings (Ta=25°C)
Collector-Emitter voltage Vces:1200V
Gate-Emitter voltage VGES:±20V
Collector current Ic:50A
Collector current Icp:100A
Collector power dissipation Pc:250W
Collector-Emitter voltage VCES:2500V
Operating junction temperature Tj:+150°C
Storage temperature Tstg :-40 to +125°C
Mounting screw torque 2/3 N·m
