Vishay Siliconix SIR802DP-T1-GE3 IGBT Module

Manufacturer Part Number: SIR802DP-T1-GE3Part Life Cycle Code: ObsoleteIhs Manufacturer: VISHAY SILICONIXPart Package Code: SOTPackage Description: SMALL OUTLINE, R-PDSO-C5Pin Count: 8ECCN Code: EAR99HTS Code: 8541.29.00.95Manufacturer: Vishay SiliconixRisk Rank: 7.83Avalanche Energy Rating (Eas): 20 mJCase Connection: DRAINConfiguration: SINGLE WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 20 VDrain Current-Max (Abs) (ID): 30 ADrain Current-Max (ID): 30 ADrain-source On Resistance-Max: 0.005 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJESD-30 Code: R-PDSO-C5JESD-609 Code: e3Number of Elements: 1Number of Terminals: 5Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: N-CHANNELPower Dissipation-Max (Abs): 27.7 WPulsed Drain Current-Max (IDM): 70 AQualification Status: Not QualifiedSubcategory: FET General Purpose PowersSurface Mount: YESTerminal Finish: MATTE TINTerminal Form: C BENDTerminal Position: DUALTime Trans MOSFET N-CH 20V 22.6A 8-Pin PowerPAK SO T/R