Infineon FP40R12KE3BOSA1 IGBT Module

Peak reverse voltage VRRM 1600V

Maximum RMS current at Rectifier output IRMSmax 60A

DC forward currentTC = 80°C Id 40A

Transistor Inverter

collector-emitter voltage VCES 1200V

DC-collector current Tc = 80 °C IC,nom 40A

DC-collector current TC = 25 °C IC 55A

Collector current tp = 1 ms, TC =80 °C ICRM 80A

Total power dissipation TC = 25°C Ptot 200W

Gate-emitter peak voltage VGES +/- 20V

Operation temperature Top-40 to 125°C

Storage temperature Tstg-40 to 125°C

Weight 180g