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FP40R12KT3G Infineon 1200V 40A PIM IGBT Module

FP40R12KT3G IGBT Module In-stock / Infineon: 1200V 40A. High-efficiency PIM drive design. 90-day warranty, industrial VFDs. Global shipping. Request pricing now.

· Categories: IGBT
· Manufacturer: Infineon
· Price: US$ 43 In-Stock Offer
· Date Code: Please Verify on Quote
. Available Qty: 398
90-Day Warranty
Global Shipping
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Whatsapp: 0086 189 2465 1869

Content last revised on August 6, 2026

Infineon FP40R12KT3G 1200V 40A PIM IGBT Module

How can power engineers minimize switching losses and component footprint in compact industrial motor drives without compromising thermal stability? The Infineon FP40R12KT3G addresses this challenge directly by integrating a full three-phase rectifier, brake chopper, and inverter stage into a single low-profile module.

Featuring a collector-emitter breakdown rating of 1200V, nominal continuous collector current of 40A at TC=80°C (55A at TC=25°C), and low saturation voltage of 1.80V typical, this EconoPIM™ 2 module delivers high power density. Key engineering benefits include reduced internal stray inductance and integrated temperature monitoring via a built-in NTC thermistor.

What is the primary benefit of its integrated topology? Enhanced system reliability by eliminating external interconnects and solder fatigue. What is the key thermal feature of the FP40R12KT3G? A low-thermal-resistance copper baseplate designed for maximum heat dissipation. For 400V industrial drives demanding compact layout and reduced switching losses, this 1200V 40A module offers an optimal balance.

Frequently Asked Questions

Addressing Thermal Management and Switching Efficiency Concerns

How does the VCE(sat) rating of 1.80V in the FP40R12KT3G impact inverter thermal dissipation?

The low saturation voltage of 1.80V (typical at IC=40A, Tvj=25°C) directly lowers conduction losses across the inverter bridge. Reduced conduction losses mean lower thermal stress on the heatsink, allowing designers to utilize smaller cooling profiles or maintain safer junction temperature margins during peak load cycles. Understanding VCE(sat) thermal behavior is vital when calculating total module power loss under elevated temperatures.

What system-level advantages does the integrated PIM topology provide over discrete IGBT designs?

Integrating the 3-phase input rectifier, brake chopper, and 3-phase inverter into the EconoPIM™ 2 package eliminates long printed circuit board traces. This monolithic configuration drastically minimizes internal parasitic stray inductance, mitigating turn-off voltage spikes. Engineers gain higher switching efficiency while simplifying drive assembly. For additional insights into power module design, consult our guide on in-depth analysis of IGBT modules.

Key Parameter Overview

Decoding Specs for Enhanced Power Density and Efficiency

Functional Block Parameter Description Symbol Value / Unit
Inverter Stage (IGBT) Collector-Emitter Breakdown Voltage VCES 1200 V
Continuous DC Collector Current (TC=80°C) IC nom 40 A
Collector-Emitter Saturation Voltage (Typ) VCE sat 1.80 V
Thermal & Mechanical Thermal Resistance, Junction to Case (IGBT) Rth(j-c) 0.60 K/W
Integrated Thermistor Resistance (25°C) R25 (NTC) 5.0 kΩ
Rectifier & Brake Repetitive Peak Reverse Voltage (Rectifier) VRRM 1600 V
Maximum DC Forward Current (Chopper) IC 40 A

Download the FP40R12KT3G datasheet for detailed specifications and performance curves.

Technical Deep Dive

Optimizing Switching Efficiency with Fast TrenchStop IGBT3 Technology

The FP40R12KT3G incorporates Infineon TRENCHSTOP™ IGBT3 semiconductor physics to deliver low dynamic losses during high-frequency switching operations. By combining a vertical trench gate geometry with a field-stop substrate layer, hole injection during turn-off is tightly regulated, significantly shortening tail currents.

Analytically, this switching mechanism operates like a precision fluid valve: high-speed gate charging enables immediate channel activation, while field-stop carrier management stops current flow rapidly without triggering destructive pressure surges. For engineers designing fast-switching stages, reviewing principles of optimizing 1200V IGBT switching efficiency reveals how lower Eon and Eoff parameters enhance overall power conversion effectiveness.

The integrated copper baseplate ensures uniform thermal dissipation from the silicon dies to the heatsink. Coupled with internal NTC temperature sensing, drive controllers can dynamically adjust gate switching rates or execute thermal shutdown before safe operating boundaries are exceeded.

Application Scenarios & Value

Achieving High Reliability in Compact Industrial Motor Control

Consider an OEM engineer building a 15kW servo motor drive operating from a standard 3-phase 400V AC supply. A key engineering challenge involves controlling internal temperature rise inside a sealed enclosure while meeting IEC 61800-3 EMC standard noise limits. The FP40R12KT3G simplifies layout by housing the complete converter-inverter-brake topology inside a single EconoPIM™ 2 module.

During rapid motor braking, the integrated PFC / Brake Chopper transistor channels energy safely into external power resistors, protecting the DC-link bus from overvoltage failure. Simultaneously, the NTC Thermal Monitoring sensor feeds real-time thermal data back to the primary micro-controller.

For system designs requiring lower output current, the related FP25R12KE3 provides a 25A rating within a similar package footprint. Alternatively, heavy-duty industrial applications requiring larger overload capacity can evaluate the higher current handling of the FP50R12KT4. Refer to our guide on decoding IGBT datasheets for further selection insights.

Ready to streamline your power stage layout? Contact our sales engineering team today to review availability, request quotes, and source authentic FP40R12KT3G modules for your current build cycle.

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