Semikron SKM200GB063D IGBT Module

SKM200GB063D not recommended for new design Features: .N channel, homogeneous Silicon structure (NPT - Non punch-through IGBT) .Low tail current with low temperature dependence .High short circuit capability, self limiting if term. G is clamped to E .Pos. temp.-coeff. of V CEsat .50 % less turn off losses .30 % less short circuit current .Very low C ies , C oes , C res .Latch-up free Fast & soft inverse CAL diodes .Isolated copper baseplate using DCB Direct Copper Bonding Technology without hard mould .Large clearance (13 mm) and creepage distances (20 mm) Typical Applications: .Switching (not for liear use) .Switched mode power supplies .AC inverter servo drives .UPS uninterruptable power supplies .Welding inverters Maximum ratings and characteristics  .Absolute maximum ratings (Tc=25°C unless without specified) Collector-Emitter voltage Vces:600V Gate-Emitter voltage VGES:±20V Collector current Ic:200A Collector current Icp:450A Collector power dissipation Pc:875W Collector-Emitter voltage VCES:2500V Operating junction temperature Tj:+150°C Storage temperature Tstg :-40 to +125°C   Power IGBT Transistor