#Texas Instruments, #TPS1120D, #IGBT_Module, #IGBT, TPS1120D Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC; TPS1120D
Manufacturer Part Number: TPS1120DBrand Name: Texas InstrumentsRohs Code: YesPart Life Cycle Code: ActiveIhs Manufacturer: Texas INSTRUMENTS INCPart Package Code: SOICPackage Description: SMALL OUTLINE, R-PDSO-G8Pin Count: 8ECCN Code: EAR99HTS Code: 8542.39.00.01Manufacturer: Texas InstrumentsRisk Rank: 0.8Additional Feature: LOGIC LEVEL COMPATIBLE, ESD PROTECTEDConfiguration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODEDS Breakdown Voltage-Min: 15 VDrain Current-Max (Abs) (ID): 1.17 ADrain Current-Max (ID): 1.17 ADrain-source On Resistance-Max: 0.4 ΩFET Technology: METAL-OXIDE SEMICONDUCTORJEDEC-95 Code: MS-012AAJESD-30 Code: R-PDSO-G8JESD-609 Code: e4Moisture Sensitivity Level: 1Number of Elements: 2Number of Terminals: 8Operating Mode: ENHANCEMENT MODEOperating Temperature-Max: 150 °CPackage Body Material: PLASTIC/EPOXYPackage Shape: RECTANGULARPackage Style: SMALL OUTLINEPeak Reflow Temperature (Cel): 260Polarity/Channel Type: P-CHANNELPower Dissipation-Max (Abs): 0.84 WQualification Status: Not QualifiedSubcategory: Other TransistorsSurface Mount: YESTerminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)Terminal Form: GULL WINGTerminal Position: DUALTime Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC